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                                       Details for article 951 of 6662 found articles
 
 
  Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates
 
 
Title: Deep level transient spectroscopy signatures of majority traps in GaN p–n diodes grown by metal-organic vapor-phase epitaxy technique on GaN substrates
Author: PŁaczek-Popko, E.
Trzmiel, J.
Zielony, E.
Grzanka, S.
Czernecki, R.
Suski, T.
Appeared in: Physica. B, Condensed matter
Paging: Volume 404 (2009) nr. 23-24 pages 3 p.
Year: 2009
Contents:
Publisher: Elsevier B.V.
Source file: Elektronische Wetenschappelijke Tijdschriften
 
 

                             Details for article 951 of 6662 found articles
 
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